transistor(npn) features ? complementary t o mmst 5 401 ? small surface mount pa ckage ? ideal f or medium power amplification a nd switching marking:k 4 n m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 180 v v ceo collector - emitter voltage 160 v v ebo emitter - base voltage 6 v i c collector current 600 m a p c collector power dissipation 200 m w r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 0 0 a , i e =0 180 v collector - emitter breakdown voltage v (br) c e o * i c = 1 ma, i b =0 160 v emitter - base breakdown voltage v (br)eb o i e = 1 0 a , i c =0 6 v collector cut - off current i cbo v cb = 120 v, i e =0 50 n a emitter cut - off current i e b o v e b = 4 v, i c =0 50 n a v ce = 5 v, i c = 1m a 80 v ce = 5 v, i c = 1 0 m a 80 300 dc current gain h fe v ce = 5 v, i c = 5 0m a 30 i c = 50 m a, i b = 5 ma 0.2 v collector - emitter saturation voltage v ce(sat) i c = 1 0 m a, i b = 1 ma 0.15 v i c = 5 0m a, i b = 5 ma 1 v base - emitter saturation voltage v b e(sat) i c = 10 m a, i b = 1 ma 1 v transition frequency f t v ce = 1 0 v,i c = 1 0 ma , f=1 00 mhz 1 00 300 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 6 pf * p ulse test: p ulse w idth 3 0 0 s, d uty c ycle 2.0%. so t C 3 23 1. base 2. emitter 3. c ollector MMST5551 1 date:2011/05 www.htsemi.com semiconductor jinyu
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